Semiconductor integrated circuit device, method of manufacturing the device, and computer readable medium

ABSTRACT

A semiconductor integrated circuit device supplied as an IP (Intellectual Property), etc., a method of manufacturing the device, and a medium for storing a processing procedure for deciding the number of delay circuits built in the device used for designing, more particularly to a semiconductor integrated circuit device which guarantees the characteristics of writing into and reading from the built-in memory even when the manufacturing process conditions are varied. pa The semiconductor integrated circuit device is provided with a cache memory which includes a BIST circuit composed of a pattern generator, a pattern comparator, and an output register; a register controlled by a register control signal and a register write signal; a variable delay circuit controlled by the register; word lines, and a sense amplifier enable signal line. The timing for enabling the sense amplifier is changed and the memory is measured by a BIST circuit at the timing, thereby deciding the optimal timing.

[0001] This is a contination of application Ser. No. 09/399,330 filedSep. 20, 1999.

FIELD OF THE INVENTION

[0002] The present invention relates to a semiconductor integratedcircuit device provided as an IP (Intellectual Property), etc., a methodof manufacturing the device, and a medium of storing a processingprocedure for deciding the number of delay circuits integrated in thesemiconductor integrated circuit device used for designing the device,more particularly to a semiconductor integrated circuit device whichguarantees the properties for writing in and reading from a memoryprovided therein, as well as a method of manufacturing the device and amedium used when in designing the device.

BACKGROUND OF THE INVENTION

[0003] In the case of conventional cache memories, data is read from thebit lines driven with a weak current of each memory cell and the weaksignal is amplified by a sense amplifier. Usually,

[0004] Usually, when a potential difference between two bit lines is 100mV, the sense amplifier is enabled. However, because the time of readingfrom such a cache memory is less when the sense amplifier is enabledwith a potential difference lower than 100 mV, the performance of thecache memory is improved. If the sense amplifier is enabled with anextremely small potential difference, however, the amplification willmalfunction; a correct value is not amplified and a wrong value isoutput if the current in a memory cell is reduced with a processvariation or if an offset occurs in the threshold voltage of an inputMOS transistor of the sense amplifier. More concretely, it is veryimportant to decide the time for enabling the sense amplifier when indesigning.

[0005] Conventionally, the timing for enabling the sense amplifier ischanged and measured, thereby deciding the optimized timing byprocessing the metallic line of the sense amplifier with the use of afocused ion beam (FIB) after a trial cache memory is formed on a siliconwafer. If the FIB is used, however, only one timing is set for one chip.In addition, a whole day is required for the processing.

[0006] On the other hand, a conventional well-known technique for such atiming decision is disclosed in ICCSS Digest of Technical Papers(pp.236-237) 1998. This document describes that the timing of the objectprogrammable cache memory is changed after the manufacturing.

[0007] Although conventional example publicly known is only in theoryand unworkable in practice, the present inventor et al has found, as aresult of a preliminary examination that a long time is required fortesting the memory from external in the on-chip timing adjustment on thebasis of the conventional technique and this causes many processes to beneeded for finding operation conditions of the object LSI.

[0008] More concretely, there has been no well-known means for operatingan LSI provided with an on-:hip memory using an element whose processcondition is uncertain so as not to be controlled (or to be controlledless) from external (ex., an IC tester).

[0009] Furthermore, there is no well-known method for adjusting such atiming to a production variation after the chip is manufactured if aCPU, a cache memory, and a DRAM. used as a secondary cache are usedtogether.

SUMMARY OF THE INVENTION

[0010] Under such the circumstances, it is an object of the presentinvention to compose a semiconductor integrated circuit device providedwith such a memory as an SRAM so as to further include a plurality ofdelay circuits for delaying a sense amplifier enable signal from a clocksignal respectively and means for deciding the minimum number of delaycircuits for assuring the normal operation of the memory.

[0011] Furthermore, it is another object of the present invention tocompose a semiconductor integrated circuit device, wherein the means fordeciding the minimum number of delay circuits is a CPU which can changethe number of delay circuits, write a predetermined value in each cellof the memory, read the written value and compare it with the writtenvalue, thereby confirming the normal operation of the memory, thendecide the minimum number of delay circuits from among the delay circuitnumbers, each of which assures the normal operation of the memory.

[0012] Furthermore, it is further another object of the presentinvention to compose a semiconductor integrated circuit device, whereinthe CPU includes a BIST circuit for testing the memory, and the BISTcircuit comprises a pattern generator for generating addresses and writedata, a pattern comparator for comparing written data with read data,and an output register for outputting the comparison result.

[0013] Furthermore, it is further another object of the presentinvention to compose a semiconductor integrated circuit device, whereineach of the delay circuits comprises an inverter delay circuit and adelay circuit number selector circuit. The delay circuit number selectorcircuit comprises a register for storing a delay circuit selected numberwritten by the CPU, and a decoder circuit for reading the delay circuitselected number stored in the register, thereby controlling the numberof inverter circuits. The delay circuit further includes another circuitfor fixing the number of delay circuits by blowing off a fuse afterdeciding the minimum number of delay circuits.

[0014] It is further another object of the present invention to providea method for manufacturing the above semiconductor integrated circuitdevice, wherein the CPU selects a change of the number of the delaycircuits, confirms the normal operation of each cell of the memory,decides the optimized number of the delay circuits, and fixes the numberof the delay circuits by blowing off a fuse, or by other means after thecircuits of the semiconductor integrated circuit device are formed.

[0015] Because the IP supplier composes a computer readable medium forstoring net list data for circuit simulation of the above semiconductorintegrated circuit device provided with a memory, as well as a mediumfor storing a processing procedure for deciding the number of delaycircuits integrated in the semiconductor integrated circuit device so asto optimize the timing for delaying the sense amplifier enable signalfrom a clock signal according to a result of circuit simulation of thesemiconductor integrated circuit device and the IP user uses the medium,it is possible to make it easier to design an LSI peculiar to the IPuser.

BRIEF DESCRIPTION OF THE DRAWINGS

[0016]FIG. 1 is a circuit diagram of a semiconductor integrated circuitdevice in accordance with the first embodiment of the present invention.

[0017]FIG. 2 is operation waveforms of the semiconductor integratedcircuit device in accordance with the first embodiment of the presentinvention.

[0018]FIG. 3 is operation waveforms of the semiconductor integratedcircuit device in accordance with the first embodiment of the presentinvention.

[0019]FIG. 4 is a circuit diagram of the semiconductor integratedcircuit device in accordance with the second embodiment of the presentinvention.

[0020]FIG. 5 is a circuit diagram of the semiconductor integratedcircuit device in accordance with the third embodiment of the presentinvention.

[0021]FIG. 6 is items supplied by the IP manufacturer in accordance withthe third embodiment of the present invention.

[0022]FIG. 7 is a flowchart of a design made by an IP user in accordancewith the third embodiment of the present invention.

[0023]FIG. 8 is a device model in accordance with the third embodimentof the present invention.

[0024]FIG. 9 shows conditional statements in accordance with the thirdembodiment of the present invention.

[0025]FIG. 10 is a circuit diagram of the semiconductor integratedcircuit device in accordance with the fourth embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] Hereunder, some of the preferred embodiments of a semiconductorintegrated circuit device in accordance with the present invention willbe described with reference to the accompanying drawings.

[0027] <First Embodiment>

[0028]FIG. 1 is a circuit diagram of a semiconductor integrated circuitdevice in an embodiment in accordance with the present invention. Aprocessor 100 which is a semiconductor device is formed on asemiconductor substrate formed of single crystal silicon with the use ofa semiconductor integrated circuit device manufacturing technique. Thesemiconductor integrated circuit device comprises a plurality of memorycells (51 to 54) disposed like a matrix (rows and columns) so as tocompose memory arrays (61, 63).

[0029] A memory cell 51 comprises a flip-flop (comprising P-channel MOStransistors (5, 6) and N-channel transistors (1, 2)) composed of a pairof CMOS inverters whose input and output are connected to each other andN-channel MOS transistors (3, 4) for connecting both storage nodes N andNB of the flip-flop to the bit lines (BL, BLB) selectively. A word line81 is connected to the gate electrode of the N-channel MOS transistor(3, 4).

[0030] Furthermore, column circuits (66 to 69) composed of a senseamplifier/latching circuit, write amplifiers (21, 22), prechargingcircuits (11, 12, 13), and a Y-switch circuit respectively are disposedside by side vertically.

[0031] The sense amplifier/latching circuit comprises a flip-flopcomposed of P-channel MOS transistors (14, 15) and N-channel MOStransistors (16, 17), a latching sense amplifier composed of anN-channel MOS transistor 18 for disabling the sense amplifier, and alatching circuit composed of NAND circuits (19, 20).

[0032] The Y-switch circuit is composed of P-channel MOS transistors (8,10) for connecting the bit lines (BL, BLB) to the sense amplifier andN-channel MOS transistors (7, 9) for connecting the bit lines (BL, BLB)to the write amplifiers (21, 22) respectively. The control signals (83,84) are used to control the P-channel MOS transistors (8, 10) and thecontrol signals (85, 86) are used to control the N-channel MOStransistors (7, 9).

[0033] The P-channel MOS transistor is turned on when in reading dataand the N-channel MOS transistors (7, 9) are turned on when in writingdata.

[0034] The address bus is connected to the decoder circuit (71, 72)disposed in the center between the two memory arrays (61, 63), so thatthe clock signal 94 is entered to the decoder circuit (71, 72). A wordline (81, 82) is thus selected according to the entered address. Asignal (87, 88) for controlling a precharging circuit (11, 12, 13) isgenerated from the clock signal 94. The sense amplifier enable signal(89, 90) is entered to the center between the two memory arrays (61 and63) and connected to the gate electrode of the N-channel MOS transistor18 for controlling enabling of the sense amplifier.

[0035] The sense amplifier enable signal (89, 90) delays and generatesthe clock signal 94, which is delayed by the delay circuit 138. Thedelay circuit 138 comprises an inverter delay circuit composed ofP-channel MOS transistors (112, 114, 116, 118, 120, 139) and N-channelMOS transistors (113, 115, 117, 119, 121, 140), and a delay circuitnumber selector circuit composed of P-channel MOS transistors (122, 124,126, 128, 130, 132) and N-channel MOS transistors (123, 125, 127, 129,131, 133). The value stored in the register (135, 136) is decoded by thedecoder circuit 137 so as to control the delay selector circuit.

[0036] The decoder circuit 137 comprises NAND circuits (109, 110, and111) and inverter circuits (107 and 108). The register (135, 136)comprises inverters (102 and 103, 105 and 106) and an N-channel MOStransistor (101, 104). Data written in the register (135, 136) istransferred to the bus (142, 143). The register control signal 141 isused to control the writing into the register (135, 136). This completesthe description for the configuration of the on-chip cache memory 99.

[0037] The bus for read data 92 and the bus for write data 93 are formedalong the column circuits (66, 67, 68, and 69). The clock signal 94 isgenerated by the clock generator circuit 95.

[0038] In addition to the cache memory described above, the processor isalso provided with a CPU 155. The CPU 155 includes a computing element156, a register file 157, and a BIST circuit 154 (built-in self-testingcircuit) for testing the cache memory. The BIST 154 comprises a patterngenerator 151 for generating addresses and write data, a patterncomparator 152 for comparing written data with read data, and an outputregister 153 for outputting the comparison result. An I/O and I/Ocontrol circuit 162 is also disposed on the processor so as to go aroundthe chip.

[0039] Next, the (read and write) operations of the cache memory 99 willbe described.

[0040]FIG. 2 shows the waveforms of the write and read operations of thecache memory 99 of the semiconductor integrated circuit device shown inFIG. 1.

[0041] Data is written in the cache memory as follows: When the clock isdriven into “H” (“HIGH” level), the data output by the CPU onto theaddress bus 91 is fetched into the cache memory, then decoded, so thatthe word line (81, 82) corresponding to the address is driven into “H”.Simultaneously, the written data is output to the write data bus 93, sothat the control signal (85, 86) is driven into “H”. The bit lines (BL,BLB) are thus driven, thereby inverting the value of the storage node(N, NB) of the memory cell 51 and the data is written in the memory cell51.

[0042] On the contrary, data is read from the cache memory as follows:The data output by the CPU onto the address bus 91 is fetched into thecache memory when the clock is driven into “H” (“HIGH” level), then thedata is decoded, thereby the word line (81, 82) corresponding to theaddress is driven into “H”. Consequently, a potential difference isgenerated between the bit lines (BL and BLB) due to the data stored inthe memory cell 51 and the control signal (83, 84) is driven into “H”.The signal is thus transferred to the sense amplifier. When thepotential difference between the bit lines (BL and BLB) reaches 100 mV,the amplifier enable signal (89, 90) is driven into “H”, thereby thispotential difference is amplified and the amplified potential differenceis output to the data bus 92 so as to complete the reading from thecache memory.

[0043] Although the potential difference between the bit lines (BL andBLB) is 100 mV for driving the sense amplifier enable signal (89, 90)into “H” in the above case, the optical timing for driving the senseamplifier enable signal (89, 90) into “H” is changed actually due to theprocess condition, etc. if the above-mentioned semiconductor device 100is formed on a silicon wafer. After a trial manufacture, therefore, thefollowing processing is carried out so as to decide the optimal timing.

[0044] At first, the CPU 155 sets necessary data in the register (136,137). Next, how to write data in the register (135, 136) of thesemiconductor integrated circuit device shown in FIG. 1 will bedescribed.

[0045] At first, the CPU 155 outputs the value to be written in theregister (135, 136) to the register write data bus (142, 143). Then, theCPU 155 drives the register control signal 141 into “H”, thereby writingthe value of the register write data bus (142, 143) into the register(135, 136). The data is thus stored in the storage nodes RN0 and RN1 ofthe register (135, 136). When the data is stored in those nodes RN0 andRN1, the control signal 141 is driven into “L” (“LOW” level) If “L” isstored in both of the storage nodes RN0 and RN1, the clock 94 passes the6 delay inverters (112 to 121) and becomes the sense amplifier enablesignal (89, 90).

[0046] If “H” and “L” are stored in the storage nodes RN0 and RN1respectively, the clock 94 passes 4 delay inverters (112 to 117) andbecomes the sense amplifier enable signal (89, 90).

[0047] If “L” and “H” are stored in the storage nodes RN0 and RN1respectively, the clock 94 passes 2 delay inverters (112, 113) andbecomes the sense amplifier enable signal (89, 90).

[0048] At first, “L” is stored in both of the storage nodes RN0 and RN1so as to delay the sense amplifier enable signal (89, 90) by a timeperiod of 6 inverters from the clock signal 94. Then, the patterngenerator 151 of the BIST 154 generates an address and write data, thenwrites a value, for example, “0” in all the memory cells (51 to 54) ofthe cache memory 99. After that, the values from all those memory cellsare read and compared with the written data in the pattern comparator152. In other words, it is checked here whether or not the read value is“0”. If all the read values are “0”, it is judged that the cache memoryoperation is normal. The output register 153 is thus notified of thenormal operation.

[0049] Next, “H” and “L” are stored in the storage nodes RN0 and RN1 soas to delay the sense amplifier enable signal (89, 90) by a time periodof 4 inverters from the clock signal 94. Then, the pattern generator 151of the BIST 154 generates an address and write data, then writes avalue, for example, “0” in all the memory cells (51 to 54) of the cachememory 99. After that, the values from all those memory cells are readand compared with the written data in the pattern comparator 152. If allthe read values are not “0”, it is judged that the cache memoryoperation is abnormal. This means that the 4 delay inverters (112 to117, 139 and 140) are not enough. In other words, 6 delay inverters (112to 121, 139 and 140) are required in this case.

[0050] If all the read values are “0”, the cache memory operation isnormal. At this time, “L” and “H” are stored in the storage nodes RN0and RN1 respectively, and the pattern generator 151 of the BIST 154generates an address and write data, then writes a value, for example,“0” in all the memory cells (51 to 54) of the cache memory 99. Afterthat, the values from all those memory cells are read. If all the readvalues are not “0”, it is judged that the cache memory operation isabnormal. This means that the 2 delay inverters (112, 113, 139, 140) arenot enough. In other words, 4 delay inverters (112 to 117, 139, 140) arerequired in this case.

[0051] If all the read values are “0”, the cache memory operation isnormal and this means that the optimal number of delay inverters is two(112, 113, 139, 140).

[0052] The minimum number of delay inverts can be decided as describedabove. And, if the optimal number of inverters is decided, the storagenodes RN0 and RN1 are short-circuited to the supply voltage (VDD) or theground potential (GND), thereby the number of inverters is fixed.

[0053] <Second Embodiment>

[0054] In the first embodiment, after a trial manufacture, the optimaltiming had to be decided and the mask had to be modified, therebymanufacturing the semiconductor integrated circuit device again. In thisembodiment, however, after the real manufacture, the optimal timing isdecided just like in the first embodiment, then a fuse is blown off,thereby fixing the register (135, 136) to the supply voltage (VDD) orthe ground potential (GND) and fixing the sense amplifier enable signal(89, 90). The object chip can thus have the optimized sense amplifiersignal (89, 90).

[0055] Hereunder, the second embodiment of the present invention will bedescribed with reference to FIG. 4.

[0056] The semiconductor device shown in FIG. 4 is provided with thecircuits shown in FIG. 1 so as to fix the storage nodes (RN0, RN1) ofthe register (136, 136) by the use of a fuse.

[0057] One of the circuits is used to turn on the N-channel MOStransistor 252, thereby fixing the storage node RN0 to the groundpotential (GND) if the fuse 253 is blown off.

[0058] Another circuit is used to turn on the P-channel MOS transistor251 via the inverter circuit 254, thereby fixing the storage node RN0 tothe supply potential (VDD) if the fuse 256 is blown off.

[0059] Further another circuit is used to turn on the N-channel MOStransistor 262, thereby fixing the storage node RN1 to the groundpotential (GND) if the fuse 263 is blown off.

[0060] Further another circuit is used to turn on the P-channel MOStransistor 261 via the inverter circuit 264, thereby fixing the storagenode RN1 to the power supply potential (VDD) if the fuse 266 is blownoff.

[0061] Instead of the fuse, a flash memory may be used.

[0062] With the use of the above means, it is possible to obtain a chipprovided with the optimal sense amplifier enable signal (89, 90) withoutmodifying the mask even when the process is varied among chips.

[0063] <Third Embodiment>

[0064] If the cache memory 99 in the first embodiment is formed with adifferent process so as to be used for a different processor as an IP,the timing for driving the sense amplifier enable signal (89, 90) into“H” will not be adjusted enough with the processing in the firstembodiment. (The IP is a block of functions collected in a state of thehardware or software required for composing a logic LSI. In thisembodiment, the IP supplier supplies the IP to an IP user in the form ofthe information shown in FIG. 6). In order to avoid this, therefore, thetiming should be adjusted roughly in the designing stage. However, if acache memory is used as an IP, the IP user should preferably be able toadjust the timing easily even when the IP user does not know the detailsof the cache memory. This is why a delay circuit 200 is provided for thecircuit shown in FIG. 1. The delay circuit 200 comprises 6 inverterscomposed of N-channel MOS transistors (213, 215, 217, 219, 221, and 223)and P-channel MOS transistors (212, 214, 216, 218, 220, and 222)respectively. The clock 94 is entered to the first inverter (212, 213).The number of delay circuits to be used for delaying the clock isdecided by a joint (a, b, c) to which the signal 224 is connected.

[0065] For example, if the signal 224 is connected to the joint b, theclock signal 94 passes 4 inverters (212 to 219) and enters the delaycircuit 138. The IP user thus carries out the following processing so asto decide a joint (a, b, c) to which the signal 224 is to be connectedin the design stage.

[0066]FIG. 6 shows items to be supplied from the IP supplier to IPusers. The items are a cache functional specification, an interfacemodel, design data, test vectors, and check properties. The design dataincludes layout data consisting of a word driver, a senseamplifier/write amplifier, and a memory cell array, as well as a controlcircuit gate description for controlling the cache memory. The checkproperties includes a net list for the circuit simulation of a cachecritical path, a timing adjustment procedure which describes one of thejoints a, b, and c shown in FIG. 5, which is used to connect the signal224, a specification change procedure, and a performance estimationprocedure. The net list for circuit simulation, a procedure for decidingthe number of delay circuits, or a program for deciding the number ofdelay circuits are recorded together in a medium or separately in media,then supplied to the object IP user.

[0067]FIG. 7 is a flowchart for an IP user to install a cache IP in theobject LSI in accordance with the timing specification. The IP userdecides the specifications of the object IP so as to select the IP. TheIP user makes a circuit simulation with the use of a net list forcircuit simulation supplied from the IP supplier and a device modelsupplied from the manufacturer. The device model, as shown in FIG. 8,consists of the gate oxide film thickness (tox) of a transistor andparameters indicating such characteristics of the transistor as athreshold voltage (vto), etc. As a result of simulation, a joint (a, b,c) to which the signal line 242 shown in FIG. 5 is to be connected isdecided in accordance with the conditional statement shown in FIG. 9 asan example, then output as a timing constraint. The conditionalstatement consists of a statement for comparing a time at which thesense amplifier enable signal takes a half value of a supply voltage(for example, when V(SA_EN(a))=0.5 Vdd indicates a time at which thesense amplifier enable signal takes a half value of a supply voltage(0.5 Vdd) when the signal line 242 shown in FIG. 5 is connected to a)with a time at which the potential difference between the bit lines (BLand BLB) exceeds 100 mV.

[0068] The control circuit gate description supplied from the IPsupplier is modified according to the timing constraint information,thereby laying out the control circuit. This layout is put together withthe mat layout, then integrated in the object LSI and the manufacture ofthe LSI is asked to a manufacturer.

[0069] The above method will thus make it possible for the IP user whois not a cache designer to materialize a high performance cache memoryin a different process.

[0070] <Fourth Embodiment>

[0071] In the above embodiments, one memory circuit is formed on onechip. FIG. 10 shows another case in which a plurality of memories areformed on one chip. When compared with the semiconductor device providedwith an on-chip cache memory shown in FIG. 5, the semiconductor deviceshown in FIG. 10 is provided with more circuits such as a DRAM and acontrol circuit for the sense amplifier enable signal. The DRAMcomprises memory cells 403 disposed like an array. Each memory cell iscomposed of an N-channel MOS transistor 402 and a capacitor 401 forstoring data by accumulating the charge. A word line 421 is connected tothe gate electrode of the N-channel MOS transistor 402. And, a bit line434 is connected to the drain electrode. The bit lines (435, 434) arepaired and data on those bit lines is amplified in the sense amplifier428 and output to the data bus 350. The sense amplifier enable signal(440) is entered to the sense amplifier (426, 427, 428). An addressdecoder 400 is also disposed on the DRAM.

[0072] The clock 94 is delayed by the delay circuit 338, therebygenerating the sense amplifier enable signal (440). The delay circuit338 comprises an inverter delay circuit composed of P-channel MOStransistors (312, 314, 316, 318, 320, and 339) and N-channel MOStransistors (313, 315, 317, 319, 321, 340), as well as a delay circuitnumber selector circuit composed of P-channel MOS transistors (322, 324,326, 328,330,332) and N-channel MOS transistors (323, 325, 327, 329,331, 333). The decoder circuit 337 decodes the value stored in theregister (335, 336), thereby controlling the delay number selectorcircuit.

[0073] The decoder circuit 337 comprises NAND circuits (309, 310, 311)and inverter circuits (307, 308). The register (335, 336) comprisesinverters (302 and 303, 305 and 306) composing a flip-flop and anN-channel MOS transistor (301, 304) for controlling receiving andwriting from/into the flip-flop circuit. The bus (352, 343) transfersthe data to be written in the register (335, 336). The signal 351 isused to control the writing into the register (335, 336). The method foradjusting the timing for enabling the sense amplifier enable signal(440) is the same as that shown in the first embodiment.

[0074] According to the present invention, therefore, it is possible tooperate the LSI provided with an on-chip memory whose process conditionsare uncertain quickly and fast so as not to be controlled (or controlledless) from external (ex., an IC tester).

[0075] Furthermore, it is also possible to correct a chip whichmalfunctions due to a varied process condition.

What is claimed is:
 1. A semiconductor integrated circuit device formedon a silicon substrate comprising: a plurality of bit lines and wordlines; a plurality of memory cells coupled to said bit lines and wordlines; a sense amplifier circuit coupled to said bit lines; a switchcircuit coupled to a first potential and. a node of the sense amplifierthat supplies a operating potential; a plurality of delay circuits whichoutputs a control signal for controlling said switch circuit; and a CPUhaving a BIST circuit; wherein the minimum number of said delay circuitsused for operation is decided after said integrated circuit device ismanufactured.
 2. The semiconductor integrated circuit device inaccordance with claim 1, wherein the minimum number of said delaycircuits used for operation is decided by said CPU which can change thenumber of said delay circuits, write a predetermined value in eachmemory cell, read the value written in each memory cell, and comparesaid read value with said written value, and then decide the minimumnumber of delay circuits from a result of test operation.
 3. Thesemiconductor integrated circuit device in accordance with claim 2,wherein the test operation is operated to every memory cell.
 4. Thesemiconductor integrated circuit device according to claim 1, whereinsaid memory comprises SRAM memory.
 5. The semiconductor integratedcircuit device according to claim 1, further comprising: a decodercircuit having addresses inputted; wherein clock signals are inputted tosaid delay circuits and said decoder circuit.
 6. The semiconductorintegrated circuit device according to claim 2, wherein said BISTcircuit has a pattern generator, a pattern comparator, and a register.7. A computer readable medium storing a net list data which is a resultof circuit simulation of a semiconductor integrated circuit deviceprovided with a memory, a BIST circuit, and a processing procedure fordeciding the number of delay circuits used to delay a clock signalaccording to said net list data to obtain the optimized timing forgenerating a sense amplifier enable signal, wherein said sense amplifierenable signal is being used for controlling enabling of a senseamplifier of said memory provided in said semiconductor integratedcircuit device.
 8. The computer readable medium according to claim 7,wherein said BIST circuit has a pattern generator, pattern comparator,and a register; wherein said processing procedure includes a step fordeciding an optimized number of delay circuits by comparing a time inwhich said sense amplifier enable signal reaches a predetermined valuewith a time in which the potential difference between bit lines of saidmemory provided in said semiconductor integrated circuit device reachesa predetermined value according to a result of said circuit simulation.9. The computer readable medium according to claim 8; wherein said stepfor deciding said optimized number of delay circuits is a step fordeciding said minimum number of delay circuits selected from delaycircuit numbers, each of which assures the normal operation of saidmemory.
 10. The computer readable medium according to claim 9; whereinboth of said net list data for circuit simulation and said processingprocedure for deciding the number of delay circuits are stored togetherin a single medium [or separately in a plurality of media].
 11. Thecomputer readable medium according to claim 7; wherein said memorycomprises a cache memory and a DRAM.
 12. A method of manufacturing asemiconductor integrated circuit device provided with a memory, a CPU, aplurality of delay circuits for delaying sense amplifier enable signalfrom, comprising steps carried out by said CPU, after circuits areformed in said semiconductor integrated circuit device, to select achange of the number of said delay circuits, confirm the normaloperation of each cell of said memory, then decide and fix saidoptimized number of delay circuits.
 13. A method of manufacturing asemiconductor integrated circuit device in accordance with claim 12,wherein said memory comprises an SRAM and a DRAM.
 14. A method ofmanufacturing a semiconductor integrated circuit device in accordancewith claim 12, wherein said step for fixing said number of delaycircuits fixes the number of delay circuits by blowing a fuse.
 15. Amethod of manufacturing a semiconductor integrated circuit device inaccordance with claim 12, wherein said step for fixing said number ofdelay circuits stores the number of delay circuits in a flash memory soas to fix the number of delay circuits.